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KTD1304-3_15 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. KTD1304-3_15
Description  NPN Transistors
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
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 1 page
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SMD Type
www.kexin.com.cn
1
Transistors
Features
High Emitter-Base Voltage :VEBO = 12V(Min)
High Reverse hFE
Low on Resistance
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
25
Collector - Emitter Voltage
VCEO
20
Emitter - Base Voltage
VEBO
12
Collector Current - Continuous
IC
300
Base Current
IB
30
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
mA
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
25
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
20
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
12
Collector-base cut-off current
ICBO
VCB=25 V , IE= 0
100
Emitter cut-off current
IEBO
VEB= 12V , IC=0
100
Collector-emitter saturation voltage
VCE(sat) IC=100 mA, IB=10mA
0.25
Base - emitter saturation voltage
VBE(sat) IC=100 mA, IB=10mA
1
hFE(1)
VCE= 2V, IC= 4mA (FOR)
200
800
hFE(2)
VCE= 2V, IC= 4mA (REV)
20
On resistance
Ron
IB=1mA,Vin=0.3V,f=1KHz
0.6
Ω
Collector output capacitance
Cob
VCB= 10V, IE= 0,f=1MHz
10
pF
Transition frequency
fT
VCE= 10V, IC= 1mA
60
MHz
DC current gain
V
V
nA
Marking
Marking
J3Y
NPN Transistors
KTD1304 (KTD1304S)
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
1. Base
2. Emitter
3. Collector
0.15 +0.02
-0.02




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