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KTD1304 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

Part No. KTD1304
Description  High emitter-base voltage
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Maker  MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]
Homepage  http://www.makosemi.hk/
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Page:P2-P1
Plastic-Encapsulate Transistors
FEATURES
• High emitter-base voltage
• low on resistance
Marking: MAX
Maximum Ratings (Ta=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
12
V
Collector Current -Continuous
IC
300
mA
Collector Power dissipation
PC
0.2
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=100
μA,
IE=0
25
V
Collector-emitter breakdown voltage
VCEO
IC=1mA, IB=0
20
V
Emitter-base breakdown voltage
VEBO
IE=100
μA, IC=0
12
V
Collector cut-off current
ICBO
VCB=25 V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=12V,
IC=0
0.1
μA
DC current gain
hFE(FOR)
VCE=2V, IC=4 mA
200
1000
hFE(REV)
VCE= 2V, IC= 4mA
20
Collector-emitter saturation voltage
VCE(sat)
IC= 100mA, IB=10 mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC= 100mA, IB=10mA
1
V
Transition frequency
fT
VCE=10V, IC= 1mA
f=100MHz
60
MHz
output capacitance
Cob
VCB=10V,IE=0,f=1MHz
10
pF
On resistance
R(on)
Vin=0.3V,IB=1mA,f=1KHZ
0.6
Ω
KTD1304 (NPN)
1. BASE
2. EMITTER
SOT-23
3. COLLECTO
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/




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