TO-126

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

700

V

Collector-Emitter Voltage

V

CEO

400

V

Emitter-Base Voltage

V

EBO

9

V

Collector Current

I

C

1.5

A

Base Current

I

B

0.75

A

Total Dissipation at

P

tot

40

W

Max. Operating Junction Temperature

T

j

150

Storage Temperature

T

stg

-55~150

MJE13003

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

V

1.0

mA

Emitter Cut-off Current

V

1.0

mA

Collector-Emitter Sustaining Voltage

I

400

V

DC Current Gain

V

8

40

V

5

25

Collector-Emitter Saturation Voltage

I

0.5

V

I

1.0

Base-Emitter Saturation Voltage

1.2

V

Current Gain Bandwidth Product

V

4

10

MHz

Storage Time

I

2

4

us

SWITCHMODE Series NPN Silicon Power Transistors

Product specification

––

These devices are designed for high

voltage, high

speed power switching inductive circuits

where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such

as Switching Regulator

s, Inverters, Motor Controls,applications Solenoid/Relay drivers and

Deflection circuits.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD