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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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Sales Office Headquarters

NORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

EUROPE

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

ASIA

Intersil (Taiwan) Ltd.

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

Die Characteristics

DIE DIMENSIONS:

(2747

µm x 2693µm x 533µm ±51.0µm)

108 x 106 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11.0k

Å

SUBSTRATE POTENTIAL:

Unbiased Silicon on Sapphire

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13.0k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

224

PROCESS:

CMOS SOS

Metallization Mask Layout

HCS244T

(18) Y0 1

(17) A3 2

(16) Y1 1

(15) A2 2

(14) Y2 1

(13)

(12)

A1 2

Y3 1

(11)

A0 2

(10)

GND

(9)

Y0 2

(8)

A3 1

(20)

OE 2

(19)

OE

(1)

A0 1

(2)

Y3 2

(3)

A1 1 (4)

Y2 2 (5)

A2 1 (6)

Y1 2 (7)

HCS244T