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Die Characteristics

DIE DIMENSIONS:

(2743

µm x 2692µm x 533µm ±51µm)

108 x 106 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11.0k

Å

SUBSTRATE POTENTIAL:

Unbiased Silicon on Sapphire

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13.0k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

264

PROCESS:

CMOS SOS

Metallization Mask Layout

HCTS244T

1OE

(1)

2OE

(19)

(20)

1A0

(2)

1A1 (4)

2Y3

(3)

2Y2 (5)

1A2 (6)

2Y1 (7)

(8)

(9)

(10)

(11)

(12)

(13)

1A3

2Y0

GND

2A0

1Y3

2A1

(14) 1Y2

(15) 2A2

(16) 1Y1

(17) 2A3

(18) 1Y0

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask

series for the HCTS244 is TA14402A.

HCTS244T