MMST3904_15 datasheet(2/3 Pages) KEXIN

Part #	MMST3904

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

MMST3904 (KMST3904)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 10 mA， IB= 0

40

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 60 V , IE= 0

60

Collector-emitter cut-off current

ICEO

VCE= 40 V , IB=0

500

Collector-emitter cut-off current

ICEX

VCE=30V, VBE(off)=-3V

50

Emitter cut-off current

IEBO

VEB= 5V , IC=0

100

IC=10 mA, IB=1mA

(Note.1)

0.25

IC= 50 mA, IB= 5mA (Note.1)

0.3

IC=10 mA, IB=1mA

(Note.1)

0.85

IC= 50 mA, IB= 5mA (Note.1)

0.95

hFE(1)

VCE= 1V, IC= 0.1mA

40

hFE(2)

VCE= 1V, IC= 1mA

70

hFE(3)

VCE= 1V, IC= 10mA

100

30

hFE(4)

VCE= 1V, IC= 50mA

60

Delay time

td

35

Rise time

tr

35

Storage time

ts

225

Fall time

tf

75

Collector output capacitance

Cob

VCB= 5 V, IE= 0,f=1MHz

4

Collector input capacitance

Cib

VEB=0.5V, IE=0, f=1MHz

8

Transition frequency

fT

VCE= 20V, IC= 10mA,f=100MHz

300

MHz

VCC=30V, VBE(off)=-0.5V

IC=10mA, IB1=1mA

nS

VCC=30V, IC=10mA, IB1=IB2=1mA

pF

V

nA

Collector-emitter saturation voltage

VCE(sat)

VBE(sat)

Base - emitter saturation voltage

V

DC current gain

(Note.1)

Note.1: Pulse test: pulse width ≤300 us,duty cycle≤ 2 %.

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Marking

K2N

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MMST3904 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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