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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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Die Characteristics

DIE DIMENSIONS:

69 mils x 92 mils x 19 mils

1750

µm x 2330µm x 483µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW

Thickness: Metal 1: 8k

Å

Type: Metal 2: AICu(2%)

Thickness: Metal 2: 16k

Å

PASSIVATION:

Type: Nitride

Thickness: 4k

Å

TRANSISTOR COUNT:

180

SUBSTRATE POTENTIAL (Powered Up):

Floating (Recommend Connection to V-)

Metallization Mask Layout

NC

+IN1

-IN1

V+

OUT1

NC

-IN2

OUT2

NC

NC

+IN2

NC

NC

HFA1212

V-

HFA1212