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HGT1S20N60B3S Datasheet(PDF) 2 Page - Intersil Corporation |
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HGT1S20N60B3S Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 6 page  2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S20N60B3S HGTP20N60B3 HGTG20N60B3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 600 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 40 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 20 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TC = 150 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 165 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG -40 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125 oC, R G = 25Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25 oC - - 250 µA TC = 150 oC - - 1.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V TC = 25 oC - 1.8 2.0 V TC = 150 oC - 2.1 2.5 V Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 3.0 5.0 6.0 V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA Switching SOA SSOA TC = 150 oC, V GE = 15V, RG = 10Ω, L = 45 µH VCE = 480V 100 - - A VCE = 600V 30 - - A Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 8.0 - V On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 80 105 nC VGE = 20V - 105 135 nC Current Turn-On Delay Time td(ON)I TC = 150 oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 100 µH -25- ns Current Rise Time trI -20- ns Current Turn-Off Delay Time td(OFF)I - 220 275 ns Current Fall Time tfI - 140 175 ns Turn-On Energy EON - 475 - µJ Turn-Off Energy (Note 3) EOFF - 1050 - µJ Thermal Resistance RθJC - - 0.76 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn- Off Energy Loss. Turn-On losses include diode losses. HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 |
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