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2SA1815-JS4 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1815-JS4 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1815 ■ Features ● High power gain : PG=25dB (f=100MHz). ● High cutoff frequency ; fT=750MHz typ. ● Low collector-to-emitter saturation voltage. ● Complementary pair with the 2SC4432. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 Emitter - Base Voltage VEBO -3 Collector Current - Continuous IC -50 mA Collector Power Dissipation PC 250 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe Type 2SA1815-JS3 2SA1815-JS4 2SA1815-JS5 Range 60-120 90-180 135-270 Marking JS3 JS4 JS5 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -15 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -12 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -3 Collector-base cut-off current ICBO VCB= -12 V , IE=0 -100 Emitter cut-off current IEBO VEB= -2V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA -0.1 -0.3 Base - emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA -1.2 DC current gain hFE VCE= -10V, IC= -5mA 60 270 Power Gain PG VCE= -10V, IC= -10mA,f=100MHz 25 dB Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 1.2 1.6 Reverse Transfer Capacitance Cre VCB= -10V, IE= 0,f=1MHz 0.9 Transition frequency fT VCE= -10V, IC= -5mA 750 MHz V V nA pF 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 1. Base 2. Emitter 3. Collector 0.15 +0.02 -0.02 |
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