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G20N120 Datasheet(PDF) 2 Page - Intersil Corporation |
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G20N120 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N120CN UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 63 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 30 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150 oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 390 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 125 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 25A, L = 400µH, TJ = 25 oC. 3. VCE(PK) = 960V, TJ = 125 oC, R G = 3Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25 oC - - 250 µA TC = 125 oC - 400 - µA TC = 150 oC- - 5 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 20A, VGE = 15V TC = 25 oC - 2.1 2.4 V TC = 150 oC - 2.9 3.5 V Gate to Emitter Threshold Voltage VGE(TH) IC = 150µA, VCE = VGE 6.0 6.9 - V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Switching SOA SSOA TJ = 150 oC, R G = 3Ω, VGE = 15V, L = 200 µH, VCE(PK) = 1200V 100 - - A Gate to Emitter Plateau Voltage VGEP IC = 20A, VCE = 0.5 BVCES - 10.2 - V On-State Gate Charge QG(ON) IC = 20A, VCE = 0.5 BVCES VGE = 15V - 155 200 nC VGE = 20V - 200 250 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25 oC ICE = 20A VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 18) -23 28 ns Current Rise Time trI -17 22 ns Current Turn-Off Delay Time td(OFF)I - 200 240 ns Current Fall Time tfI - 220 270 ns Turn-On Energy (Note 5) EON1 - 0.9 1.1 mJ Turn-On Energy (Note 5) EON2 - 2.0 2.5 mJ Turn-Off Energy (Note 4) EOFF - 2.8 3.3 mJ HGTG20N120CN |
Similar Part No. - G20N120 |
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Similar Description - G20N120 |
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