G20N120 datasheet(2/7 Pages) INTERSIL

Part #	G20N120

Description	63A, 1200V, NPT Series N-Channel IGBT

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Manufacturer	INTERSIL [Intersil Corporation]

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

HGTG20N120CN

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

1200

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

63

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

30

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

160

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

100A at 1200V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

390

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.12

W/oC

Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV

125

mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

260

oC

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

8

µs

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

15

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE = 25A, L = 400µH, TJ = 25

oC.

3. VCE(PK) = 960V, TJ = 125

oC, R

G = 3Ω.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

1200

-

V

Emitter to Collector Breakdown Voltage

BVECS

IC = 10mA, VGE = 0V

15

-

V

Collector to Emitter Leakage Current

ICES

VCE = BVCES

TC = 25

oC

-

250

µA

TC = 125

oC

-

400

-

µA

TC = 150

oC-

-

5

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 20A,

VGE = 15V

TC = 25

oC

-

2.1

2.4

V

TC = 150

oC

-

2.9

3.5

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 150µA, VCE = VGE

6.0

6.9

-

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 3Ω, VGE = 15V,

L = 200

µH, VCE(PK) = 1200V

100

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = 20A, VCE = 0.5 BVCES

-

10.2

-

V

On-State Gate Charge

QG(ON)

IC = 20A,

VCE = 0.5 BVCES

VGE = 15V

-

155

200

nC

VGE = 20V

-

200

250

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

oC

ICE = 20A

VCE = 0.8 BVCES

VGE = 15V

RG = 3Ω

L = 1mH

Test Circuit (Figure 18)

-23

28

ns

Current Rise Time

trI

-17

22

ns

Current Turn-Off Delay Time

td(OFF)I

-

200

240

ns

Current Fall Time

tfI

-

220

270

ns

Turn-On Energy (Note 5)

EON1

-

0.9

1.1

mJ

Turn-On Energy (Note 5)

EON2

-

2.0

2.5

mJ

Turn-Off Energy (Note 4)

EOFF

-

2.8

3.3

mJ

HGTG20N120CN

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