HGTG5N120BND datasheet(6/7 Pages) INTERSIL

Part #	HGTG5N120BND

Description	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

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Manufacturer	INTERSIL [Intersil Corporation]

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FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

FIGURE 18. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0

5

10

15

20

25

0

0.5

CIES

COES

1.0

CRES

FREQUENCY = 1MHz

1.5

2.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0

0.5

1.0

DUTY CYCLE < 0.5%, TC = 110

oC

PULSE DURATION = 250

µs

VGE = 15V

VGE = 10V

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

2

4

6

8

10

t1, RECTANGULAR PULSE DURATION (s)

10-2

10-1

100

10-5

10-3

10-2

10-1

100

10-4

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD x ZθJC x RθJC) + TC

SINGLE PULSE

0.5

0.2

0.1

0.05

0.02

0.01

t1

t2

PD

1

10

100

0

1

2345

678

VF, FORWARD VOLTAGE (V)

150oC

-55oC

25oC

60

50

40

30

20

10

0

1234

567

IF, FORWARD CURRENT (A)

TC = 25

oC, dl

EC / dt = 200A/µs

trr

ta

tb

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS

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HGTG5N120BND Datasheet(PDF) 6 Page - Intersil Corporation

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