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HGTG5N120CND Datasheet(PDF) 5 Page - Intersil Corporation

Part # HGTG5N120CND
Description  25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTG5N120CND Datasheet(HTML) 5 Page - Intersil Corporation

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5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
246
15
20
25
30
35
5
40
79
810
TJ = 25
oC, T
J = 150
oC, V
GE = 12V
TJ = 25
oC, T
J = 150
oC, V
GE = 15V
RG = 25Ω, L = 5mH, VCE = 960V
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
0
10
30
25
15
7
2
20
6
5
410
9
8
35
40
TJ = 25
oC, T
J = 150
oC, V
GE = 12V
TJ = 25
oC, T
J = 150
oC, V
GE = 15V
RG = 25Ω, L = 5mH, VCE = 960V
23
6
1
300
5
4
100
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
9
8
7
600
400
500
10
0
TJ = 150
oC, V
GE = 12V, VGE = 15V
TJ = 25
oC, V
GE = 12V, VGE = 15V
RG = 25Ω, L = 5mH, VCE = 960V
ICE, COLLECTOR TO EMITTER CURRENT (A)
23
5
1
300
400
4
100
200
500
600
8
7
610
9
700
800
TJ = 150
oC, V
GE = 12V AND 15V
TJ = 25
oC, V
GE = 12V AND 15V
900
RG = 25Ω, L = 5mH, VCE = 960V
0
10
12
6789
11
VGE, GATE TO EMITTER VOLTAGE (V)
10
20
30
13
14
40
250
µs PULSE TEST
DUTY CYCLE < 0.5%, VCE = 20V
50
60
70
80
15
TC = -55
oC
TC = 25
oC
TC = 150
oC
16
90
100
QG, GATE CHARGE (nC)
8
4
20
2
6
0
050
10
30
60
40
14
10
12
16
IG(REF) = 1mA, RL = 120Ω, TC = 25
oC
VCE = 800V
VCE = 1200V
VCE = 400V
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS


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