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HGTG7N60A4D Datasheet(PDF) 2 Page - Intersil Corporation

Part # HGTG7N60A4D
Description  600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTG7N60A4D Datasheet(HTML) 2 Page - Intersil Corporation

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2-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
34
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
14
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
35A at 600V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Collector to Emitter Leakage Current
ICES
VCE = 600V
TJ = 25
oC
-
-
250
µA
TJ = 125
oC-
-
2
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 7A,
VGE = 15V
TJ = 25
oC
-
1.9
2.7
V
TJ = 125
oC
-
1.6
2.2
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA, VCE = 600V
4.5
5.9
7
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 25Ω, VGE = 15V,
L = 100
µH, VCE = 600V
35
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 7A, VCE = 300V
-
9
-
V
On-State Gate Charge
Qg(ON)
IC = 7A,
VCE = 300V
VGE = 15V
-
37
45
nC
VGE = 20V
-
48
60
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-11
-
ns
Current Rise Time
trI
-11
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
100
-
ns
Current Fall Time
tfI
-45
-
ns
Turn-On Energy
EON1
-55
-
µJ
Turn-On Energy
EON2
-
120
150
µJ
Turn-Off Energy (Note 2)
EOFF
-60
75
µJ
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC,
ICE = 7A,
VCE = 390V, VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-10
-
ns
Current Rise Time
trI
-7
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
130
150
ns
Current Fall Time
tfI
-75
85
ns
Turn-On Energy (Note 2)
EON1
-50
-
µJ
Turn-On Energy (Note 2)
EON2
-
200
215
µJ
Turn-Off Energy (Note 3)
EOFF
-
125
170
µJ
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS


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