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HGTP5N120CND Datasheet(PDF) 2 Page - Intersil Corporation |
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HGTP5N120CND Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG5N120CND HGTP5N120CND HGT1S5N120CNDS UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 25 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 12 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 40 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150 oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 167 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125 oC, R G = 25Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25 oC - - 250 µA TC = 125 oC - 100 - µA TC = 150 oC- - 2 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 5.5A, VGE = 15V TC = 25 oC - 2.1 2.4 V TC = 150 oC - 2.9 3.5 V Gate to Emitter Threshold Voltage VGE(TH) IC = 45µA, VCE = VGE 6.0 7.0 - V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Switching SOA SSOA TJ = 150 oC, R G = 25Ω, VGE = 15V, L = 200 µH, VCE(PK) = 1200V 25 - - A Gate to Emitter Plateau Voltage VGEP IC = 5.5A, VCE = 0.5 BVCES - 10.6 - V On-State Gate Charge QG(ON) IC = 5.5A, VCE = 0.5 BVCES VGE = 15V - 45 55 nC VGE = 20V - 60 75 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25 oC ICE = 5.5A VCE = 0.8 BVCES VGE = 15V RG = 25Ω L = 5mH Test Circuit (Figure 20) -22 30 ns Current Rise Time trI -12 16 ns Current Turn-Off Delay Time td(OFF)I - 180 250 ns Current Fall Time tfI - 280 350 ns Turn-On Energy EON - 400 500 µJ Turn-Off Energy (Note 3) EOFF - 640 700 µJ HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS |
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