Electronic Components Datasheet Search |
|
HGTP10N40F1D Datasheet(PDF) 2 Page - Intersil Corporation |
|
HGTP10N40F1D Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 5 page 3-26 Specifications HGTP10N40F1D, HGTP10N50F1D Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS LIMITS UNITS HGTP10N40F1D HGTP10N50F1D MIN MAX MIN MAX Collector-Emitter Breakdown Voltage BVCES IC = 1.25mA, VGE = 0V 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V Zero Gate Voltage Collector Current ICES TJ = +150 oC, V CE = 400V - 1.25 - - mA TJ = +150 oC, V CE = 500V - - - 1.25 mA Gate-Emitter Leakage Current IGES VGE = ±20V, VCE = 0V - 100 - 100 nA Collector-Emitter On-Voltage VCE(ON) TJ = +150 oC, I C = 5A, VGE = 10V - 2.5 - 2.5 V TJ = +150 oC, I C = 5A, VGE = 15V - 2.2 - 2.2 V TJ = +25 oC, I C = 5A, VGE = 10V - 2.5 - 2.5 V TJ = +25 oC, I C = 5A, VGE = 15V - 2.2 - 2.2 V Gate-Emitter Plateau Voltage VGEP IC = 5A, VCE = 10V 5.3 (Typ) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V 13.4 (Typ) nC Turn-On Delay Time tD(ON) Resistive Load, IC = 5A, VCE = 400V, RL = 80Ω, TJ = +150 oC, V GE = 10V, RG = 25Ω 45 (Typ) ns Rise Time tRI 35 (Typ) ns Turn-Off Delay Time tD(OFF) 130 (Typ) ns Fall Time tFI 1400 (Typ) ns Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF 0.64 (Typ) mJ Turn-Off Delay Time tD(OFF)I Inductive Load (See Figure 13), IC = 5A, VCE(CLP) = 400V, RL = 80 Ω, L = 50µH, T J = +150 oC, V GE = 10V, RG = 25Ω - 375 - 375 ns Fall Time tFI - 1200 - 1200 ns Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF - 1.2 - 1.2 mJ Thermal Resistance Junction-to- Case (IGBT) RθJC - 1.67 - 1.67 oC/W Thermal Resistance of Diode RθJC - 2.0 - 2.0 oC/W Diode Forward Voltage VEC IEC = 10A - 1.7 - 1.7 V Diode Reverse Recovery Time tRR IEC = 10A, dIEC/dt = 100A/µs - 60 - 60 ns Typical Performance Curves FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 12 10 8 6 4 2 0 02 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) PULSE TEST, VCE = 10V PULSE DURATION = 250 µs DUTY CYCLE < 2% TC = -55 oC TC = +25 oC TC = +150 oC TC = -55 oC 10 8 6 4 2 0 02 4 6 8 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) PULSE DURATION = 250 µs DUTY CYCLE < 0.5% TC = +25 oC VGE = 10V VGE = 6.0V VGE = 5.5V VGE = 5.0V VGE = 4.5V VGE = 4.0V |
Similar Part No. - HGTP10N40F1D |
|
Similar Description - HGTP10N40F1D |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |