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HGTP10N40F1D Datasheet(PDF) 2 Page - Intersil Corporation

Part # HGTP10N40F1D
Description  10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTP10N40F1D Datasheet(HTML) 2 Page - Intersil Corporation

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Specifications HGTP10N40F1D, HGTP10N50F1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTP10N40F1D
HGTP10N50F1D
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BVCES
IC = 1.25mA, VGE = 0V
400
-
500
-
V
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector
Current
ICES
TJ = +150
oC, V
CE = 400V
-
1.25
-
-
mA
TJ = +150
oC, V
CE = 500V
-
-
-
1.25
mA
Gate-Emitter Leakage Current
IGES
VGE = ±20V, VCE = 0V
-
100
-
100
nA
Collector-Emitter On-Voltage
VCE(ON)
TJ = +150
oC, I
C = 5A, VGE = 10V
-
2.5
-
2.5
V
TJ = +150
oC, I
C = 5A, VGE = 15V
-
2.2
-
2.2
V
TJ = +25
oC, I
C = 5A, VGE = 10V
-
2.5
-
2.5
V
TJ = +25
oC, I
C = 5A, VGE = 15V
-
2.2
-
2.2
V
Gate-Emitter Plateau Voltage
VGEP
IC = 5A, VCE = 10V
5.3 (Typ)
V
On-State Gate Charge
QG(ON)
IC = 5A, VCE = 10V
13.4 (Typ)
nC
Turn-On Delay Time
tD(ON)
Resistive Load, IC = 5A,
VCE = 400V, RL = 80Ω,
TJ = +150
oC, V
GE = 10V,
RG = 25Ω
45 (Typ)
ns
Rise Time
tRI
35 (Typ)
ns
Turn-Off Delay Time
tD(OFF)
130 (Typ)
ns
Fall Time
tFI
1400 (Typ)
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
WOFF
0.64 (Typ)
mJ
Turn-Off Delay Time
tD(OFF)I
Inductive Load (See Figure 13),
IC = 5A, VCE(CLP) = 400V, RL =
80
Ω, L = 50µH, T
J = +150
oC, V
GE =
10V, RG = 25Ω
-
375
-
375
ns
Fall Time
tFI
-
1200
-
1200
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
WOFF
-
1.2
-
1.2
mJ
Thermal Resistance Junction-to-
Case (IGBT)
RθJC
-
1.67
-
1.67
oC/W
Thermal Resistance of Diode
RθJC
-
2.0
-
2.0
oC/W
Diode Forward Voltage
VEC
IEC = 10A
-
1.7
-
1.7
V
Diode Reverse Recovery Time
tRR
IEC = 10A, dIEC/dt = 100A/µs
-
60
-
60
ns
Typical Performance Curves
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
12
10
8
6
4
2
0
02
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, VCE = 10V
PULSE DURATION = 250
µs
DUTY CYCLE < 2%
TC = -55
oC
TC = +25
oC
TC = +150
oC
TC = -55
oC
10
8
6
4
2
0
02
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%
TC = +25
oC
VGE = 10V
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V


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