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HGTP1N120CND Datasheet(PDF) 3 Page - Intersil Corporation |
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HGTP1N120CND Datasheet(HTML) 3 Page - Intersil Corporation |
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3 / 7 page  3 Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC, ICE = 1.0 A, VCE = 0.8 BVCES, VGE = 15V, RG = 82Ω, L = 4mH, Test Circuit (Figure 20) -13 20 ns Current Rise Time trI -11 18 ns Current Turn-Off Delay Time td(OFF)I - 75 100 ns Current Fall Time tfI - 465 625 ns Turn-On Energy (Note 3) EON - 385 460 J Turn-Off Energy (Note 3) EOFF - 200 225 J Diode Forward Voltage VEC IEC = 1A - 1.3 1.8 V Diode Reverse Recovery Time trr IEC = 1A, dIEC/dt = 200A/µs- - 50 ns Thermal Resistance Junction To Case RθJC IGBT - - 2.1 oC/W Diode - - 3 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to diode recovery. Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME TC, CASE TEMPERATURE ( oC) 50 0 4 5 1 25 75 100 125 150 3 2 6 7 VGE = 15V VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400 3 0 1 2 600 800 400 200 1000 1200 0 4 6 5 7 TJ = 150 oC, R G = 82Ω, VGE = 15V, L = 2mH 0.5 ICE, COLLECTOR TO EMITTER CURRENT (A) 5 10 2.0 1.0 100 3.0 200 300 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) RθJC = 2.1 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC) / (EON + EOFF) TJ = 150 oC, R G = 82Ω, L = 4mH, VCE = 960V TC VGE 110oC 13V 15V 15V 75oC 110oC 75oC 13V VGE, GATE TO EMITTER VOLTAGE (V) 13 14 15 10 12 14 16 18 20 10 12 14 16 18 20 VCE = 840V, RG = 82Ω, TJ = 125 oC tSC ISC HGTP1N120CND, HGT1S1N120CNDS |
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