4-1072

Absolute Maximum Ratings

Thermal Information

Supply Voltage

|DGND-AGND| . . . . . . . . . . . . . . . . . . . . . . . . . . . .0mV to 100mV

Reference Input Voltage

Clock Pulse Width

Thermal Resistance (Typical, Note 1)

θ

PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

78

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

98

(SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of

the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1.

Electrical Specifications

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SYSTEM PERFORMANCE

Offset Voltage

-60

-35

-10

mV

0

+15

+45

mV

Integral Non-Linearity, INL

-

±0.5

±1.3

LSB

Differential Non-Linearity, DNL

-

±0.3

±0.5

LSB

DYNAMIC CHARACTERISTICS

Effective Number of Bits, ENOB

-

7.6

-

Bits

Spurious Free Dynamic Range

-

51

-

dB

Signal to Noise Ratio, SINAD

-

46

-

dB

-

46

-

dB

20

35

-

MSPS

Minimum Conversion Speed

-

-

0.5

MSPS

Differential Gain Error, DG

-

1.0

-

%

Differential Phase Error, DP

-

0.5

-

Degree

-30-

ps

-4-

ns

-

-

2.5

Cycles

ANALOG INPUTS

Analog Input Bandwidth (-1dB), BW

-

18

-

MHz

-11-

pF

RMS Signal

RMS Noise

Distor tion

+

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HI1175