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NDT6N70P Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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NDT6N70P Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 4 page DIP Type www.kexin.com.cn 4 MOSFET . N-Channel Enhancement MOSFET NDT6N70P ■ Typical Characterisitics 1.2 3.0 0 8 0.9 1.0 1.1 ※ Notes : 1. V GS = 0 V 2. I D = 250 μ A 0.5 1.0 1.5 2.0 2.5 ※ Notes : 1. V GS = 10 V 2. I D = 2.4 A Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature -100 -50 0 50 100 150 200 0.8 T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 T J, Junction Temperature [ oC] 10 2 Operation in This Area is Limited by R DS(on) 4 5 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms 1 ms DC 10 ms 100us ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse 25 50 75 100 125 150 0 1 2 3 4 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature V DS, Drain-Source Voltage [V] T C, Case Temperature [ ] ℃ 10 0 D=0.5 0.2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 ※ Notes : 1. Z θ JC(t) = 1.3 /W Max. ℃ 2. Duty Factor, D=t 1/t2 3. T JM - TC = PDM * Zθ JC(t) single pulse 0.02 0.05 0.1 0.01 PDM t1 t2 Figure 10. Maximum Drain Current vs Case Temperature t 1, Square Wave Pulse Duration [sec] |
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