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NDT6N70P Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Part # NDT6N70P
Description  N-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

NDT6N70P Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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4
MOSFET
.
N-Channel Enhancement MOSFET
NDT6N70P
Typical Characterisitics
1.2
3.0
0 8
0.9
1.0
1.1
Notes :
1. V
GS = 0 V
2. I
D = 250 μ A
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS = 10 V
2. I
D = 2.4 A
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
-100
-50
0
50
100
150
200
0.8
T
J, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
T
J, Junction Temperature [
oC]
10
2
Operation in This Area
is Limited by R
DS(on)
4
5
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
1 ms
DC
10 ms
100us
Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
25
50
75
100
125
150
0
1
2
3
4
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
V
DS, Drain-Source Voltage [V]
T
C, Case Temperature [
]
10
0
D=0.5
0.2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
Notes :
1. Z
θ JC(t) = 1.3
/W Max.
2. Duty Factor, D=t
1/t2
3. T
JM - TC = PDM * Zθ JC(t)
single pulse
0.02
0.05
0.1
0.01
PDM
t1
t2
Figure 10. Maximum Drain Current
vs Case Temperature
t
1, Square Wave Pulse Duration [sec]


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