NDT35N06 datasheet(2/4 Pages) KEXIN

Part #	NDT35N06

Description	N-Channel Enhancement MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel Enhancement MOSFET

NDT35N06

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=1mA, VGS=0V

60

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

1

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±16V

±

10

Cutoff Voltage

VGS(off)

VDS=10V , ID=1mA

1.2

2.6

V

Forward Transfer Admittance

|Yfs |

VDS=10V , ID=18A

35

S

RDS(On)1

VGS=10V, ID=18A

17

23

RDS(On)2

VGS=4.5V, ID=9A

23

33

RDS(On)3

VGS=4.0V, ID=5A

25

37

Input Capacitance

Ciss

1820

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

100

Total Gate Charge

Qg

34.5

Gate Source Charge

Qgs

6.5

Gate Drain Charge

Qgd

6.8

Turn-On DelayTime

td(on)

16

Turn-On Rise Time

tr

110

Turn-Off DelayTime

td(off)

125

Turn-Off Fall Time

tf

87

Maximum Body-Diode Continuous Current

IS

35

A

Diode Forward Voltage

VSD

IS=35A,VGS=0V

0.96

1.2

V

pF

nC

ns

See specified Test Circuit

VGS=0V, VDS=20V, f=1MHz

VGS=10V, VDS=30V, ID=35A

μ

A

Static Drain-Source On-Resistance

mΩ

Switching Time Test Circuit:

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID=18A

RL=1.67Ω

VDD=30V

VOUT

VIN

10V

0V

VIN

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NDT35N06 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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