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SI2314EDS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # SI2314EDS
Description  N-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2314EDS Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
2
MOSFET
N-Channel Enhancement MOSFET
SI2314EDS (KI2314EDS)
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
20
V
VDS=16V, VGS=0V
1
VDS=16V, VGS=0V, Ta=70℃
75
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±4.5V
±
1.5
A
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
0.45
1
V
On-State Drain Current *1
ID(on)
VDS ≥ 10 V, VGS = 4.5 V
15
A
VGS=4.5V, ID=5.0A
27
33
VGS=2.5V, ID=4.5A
33
40
VGS=1.8V, ID=4.0A
42
51
Forward Transconductance *1
gFS
VDS=15V, ID=5.0A
40
S
Total Gate Charge
Qg
11
14
Gate Source Charge
Qgs
1.5
Gate Drain Charge
Qgd
2.1
Turn-On DelayTime
td(on)
0.53
0.8
Turn-On Rise Time
tr
1.4
2.2
Turn-Off DelayTime
td(off)
13.5
20
Turn-Off Fall Time
tf
5.9
9
Body Diode Reverse Recovery Time
trr
IF= 1.0A, dI/dt= 100A/μs
13
25
Maximum Body-Diode Continuous Current
IS
1.0
A
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
0.8
1.2
V
Zero Gate Voltage Drain Current
IDSS
μ
μ
A
VGS=4.5V, VDS=10V, ID=5.0A
Static Drain-Source On-Resistance *1
nC
us
RDS(On)
mΩ
ID=1.0A, VDS=10V, ,VGEN=4.5V
RL=10Ω,RG=6Ω
*1 Pulse test: PW ≤ 300us duty cycle≤ 2%.
■
Marking
Marking
C4*


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