SNN01Z10D datasheet(2/8 Pages) KODENSHI

Part #	SNN01Z10D

Description	Logic level N-CH Power MOWFET

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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2 / 8 page

Rev. date: 17-JAN-12

KSD-T6O039-000

www.auk.co.kr

2 of 8

Thermal Characteristics

Characteristic

Symbol

Rating

Unit

Thermal resistance, junction to case

Rth(j-c)

Max. 6.94

C/W

Thermal resistance, junction to ambient

Rth(j-a)

Max. 50

* When mounted on the minimum pad size recommended (PCB).

Electrical Characteristics (T

j=25C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

BVDSS

ID=250uA, VGS=0V

100

-

V

Gate threshold voltage

VGS(th)

ID=250uA, VDS=VGS

1

-

2.5

V

Drain-source cut-off current

IDSS

VDS=100V, VGS=0V

-

1

uA

Gate leakage current

IGSS

VDS=0V, VGS=20V

-

10

uA

Drain-source on-resistance

RDS(ON)

VGS=10V, ID=0.5A

-

0.18

0.24



VGS=4.5V, ID=0.5A

0.20

0.27



Forward transfer conductance (Note 3)

gfs

VDS=10V, ID=0.5A

-

3

-

S

Input capacitance

Ciss

VDS=25V, VGS=0V,

f=1MHz

-

315

445

pF

Output capacitance

Coss

-

36

71

Reverse transfer capacitance

Crss

-

22

43

Turn-on delay time (Note 3,4)

td(on)

VDD=50V, ID=1A,

RG=25Ω

-

3

-

ns

Rise time (Note 3,4)

tr

-

3.8

-

Turn-off delay time (Note 3,4)

td(off)

-

10.6

-

Fall time (Note 3,4)

tf

-

4.8

-

Total gate charge (Note 3,4)

Qg

VDS=80V, VGS=10V,

ID=1A

-

8

10

nC

Gate-source charge (Note 3,4)

Qgs

-

1

-

Gate-drain charge (Note 3,4)

Qgd

-

2

-

Source-Drain Diode Ratings and Characteristics (T

C=25C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

IS

Integral reverse diode

in the MOSFET

-

1

A

Source current (Pulsed)

ISM

-

4

A

Forward voltage

VSD

VGS=0V, IS=1A

-

1.2

V

Reverse recovery time (Note 3,4)

trr

IF=1A, VGS=0V

dIF/dt=100A/us

-

25

-

ns

Reverse recovery charge (Note 3,4)

Qrr

-

18.8

-

uC

Note:

1. Repeated rating: Pulse width limited by safe operating area

2. L=35mH, IAS=1A, VDD=50V, RG=25, Starting TJ=25C\

3. Pulse test: Pulse width≤300us, Duty cycle≤2%

4. Essentially independent of operating temperature typical characteristics

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