2N7002E-3 datasheet(2/2 Pages) KEXIN

Part #	2N7002E-3

Description	N-Channel Enhancement MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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2

MOSFET

2N7002E

■

Typical Characterisitics

0

0.2

0.4

0.6

0.8

1.0

0

1

2

3

4

5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 On-Region Characteristics

V

= 10V

G S

9.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

2.1V

5.5V

10V

5.0V

2.1V

0

V , GATE TO SOURCE VOLTAGE (V)

GS

Fig. 2 Drain Current vs. Gate-Source Voltage

0.4

0.8

1.2

1.6

2.0

0

1

2

3

4

5

6

7

T

= -55°

C

A

T

= 125°

C

A

T

= 25°

C

A

0

1

2

3

4

5

0

2

4

6

8

10

V

- GATE TO SOURCE VOLTAGE (V)

GS

Fig. 3 On Resistance vs.

Gate to Source Voltage

I = 75mA

D

I = 250mA

D

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1.0

I , DRAIN CURRENT (A)

D

Fig. 4 On Resistance vs.

Drain Current

V

= 4.5V

GS

V

= 10V

GS

0

T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance vs. Junction Temperature

V

= 4.5V @

200m A

GS

1

2

3

4

5

-75

-50

-25

0

25

50

75

10 0 12 5

15 0

V

= 10 V @

250m A

GS

0

50

10 0

25

50

75

10 0

12 5

15 0

17 5

20 0

T , AMBIENT TEMPERATURE (°C)

A

Fig. 6, Max Power Dissipation vs

Ambient Temperature

15 0

20 0

25 0

30 0

35 0

0

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2N7002E-3 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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