ADF4360-8

Data Sheet

Rev. C | Page 6 of 24

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to +3.9 V

−0.3 V to +0.3 V

Digital I/O Voltage to GND

Analog I/O Voltage to GND

Operating Temperature Range

−40°C to + 85°C

Storage Temperature Range

−65°C to +150°C

Maximum Junction Temperature

150°C

Paddle Soldered

50°C/W

Paddle Not Soldered

88°C/W

Lead Temperature, Soldering Reflow

260°C

1

GND = AGND = DGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <1 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

TRANSISTOR COUNT

12543 (CMOS) and 700 (Bipolar)

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate

on the human body and test equipment and can discharge without detection. Although this product

features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to

high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid per-

formance degradation or loss of functionality.