MTE130N20KF3 datasheet(3/9 Pages) CYSTEKEC

Part #	MTE130N20KF3

Description	N-Channel Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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3 / 9 page

CYStech Electronics Corp.

Spec. No. : C952F3

Issued Date : 2014.06.03

Revised Date :

Page No. : 3/9

MTE130N20KF3

CYStek Product Specification

Characteristics (TC=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

200

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

0.2

-

V/

°C

Reference to 25

°C, ID=250μA

VGS(th)

2.0

3.2

4.0

V

VDS = VGS, ID=250μA

GFS

-

15

-

S

VDS =10V, ID=9A

IGSS

-

±

10

VGS=±20V

-

1

VDS =180V, VGS =0V

IDSS

-

10

μA

VDS =180V, VGS =0V, Tj=125

°C

*RDS(ON)

-

143

185

mΩ

VGS =10V, ID=9A

Dynamic

*Qg

-

22

-

*Qgs

-

5.5

-

*Qgd

-

9.4

-

nC

VDS=160V, ID=18A, VGS=10V

*td(ON)

-

21

-

*tr

-

32

-

*td(OFF)

-

40

-

*tf

-

30

-

ns

VDS=100V, ID=18A, VGS=10V, RG=6Ω

Ciss

-

972

-

Coss

-

85

-

Crss

-

37

-

pF

VGS=0V, VDS=25V, f=1MHz

Source-Drain Diode

*IS

-

18

*ISM

-

34

A

*VSD

-

0.87

1.2

V

IS=18A, VGS=0V

*trr

-

90

-

ns

*Qrr

-

260

-

nC

IF=18A, VGS=0, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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