4

Functional Pin Description

UGATE (Pin 1)

Upper gate drive output. Connect to gate of high-side power

N-Channel MOSFET.

BOOT (Pin 2)

Floating bootstrap supply pin for the upper gate drive.

Connect the bootstrap capacitor between this pin and the

PHASE pin. The bootstrap capacitor provides the charge to

turn on the upper MOSFET. See the Internal Bootstrap

Device section under DESCRIPTION for guidance in

choosing the appropriate capacitor value.

PWM (Pin 3)

The PWM signal is the control input for the driver. The PWM

signal can enter three distinct states during operation, see the

three-state PWM Input section under DESCRIPTION for further

details. Connect this pin to the PWM output of the controller.

GND (Pin 4)

Bias and reference ground. All signals are referenced to this

node.

LGATE (Pin 5)

Lower gate drive output. Connect to gate of the low-side

power N-Channel MOSFET.

VCC (Pin 6)

Connect this pin to a +12V bias supply. Place a high quality

bypass capacitor from this pin to GND.

PVCC (Pin 7)

For the HIP6601, this pin supplies the upper gate drive bias.

Connect this pin from +12V down to +5V.

For the HIP6603, this pin supplies both the upper and lower

gate drive bias. Connect this pin to either +12V or +5V.

PHASE (Pin 8)

Connect this pin to the source of the upper MOSFET and the

drain of the lower MOSFET. The PHASE voltage is

monitored for adaptive shoot-through protection. This pin

also provides a return path for the upper gate drive.

Description

Operation

Designed for versatility and speed, the HIP6601 and HIP6603

dual MOSFET drivers control both high-side and low-side N-

Channel FETs from one externally provided PWM signal.

The upper and lower gates are held low until the driver is

initialized. Once the VCC voltage surpasses the VCC Rising

Threshold (See Electrical Specifications), the PWM signal

takes control of gate transitions. A rising edge on PWM

initiates the turn-off of the lower MOSFET (see Timing

provided in the Electrical Specifications section. Adaptive

shoot-through circuitry monitors the LGATE voltage and

on how quickly the LGATE voltage drops below 1.0V. This

prevents both the lower and upper MOSFETs from

conducting simultaneously or shoot-through. Once this delay

period is complete the upper gate drive begins to rise

Timing Diagram

PWM

UGATE

LGATE

HIP6601, HIP6603