SMD Type

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2

MOSFET

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

30

V

1

5

Gate-Body Leakage Current

±

100

nA

Gate Threshold Voltage

0.65

1.45

V

24

34

30

48

On State Drain Current

60

A

Forward Transconductance

37

S

Input Capacitance

630

Output Capacitance

75

Reverse Transfer Capacitance

50

Gate Resistance

1.5

4.5

Ω

Total Gate Charge

6

7

Gate Source Charge

1.3

Gate Drain Charge

1.8

Turn-On DelayTime

3

Turn-On Rise Time

2.5

Turn-Off DelayTime

25

Turn-Off Fall Time

4

Body Diode Reverse Recovery Time

8.5

Body Diode Reverse Recovery Charge

2.6

nC

Maximum Body-Diode Continuous Current

4

A

Diode Forward Voltage

1

V

pF

nC

ns

Zero Gate Voltage Drain Current

uA

mΩ

Static Drain-Source On-Resistance

Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

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Marking

4404B

KC****

Marking