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HPLU3103 Datasheet(PDF) 1 Page - Intersil Corporation |
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HPLU3103 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 6 page 6-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HPLR3103, HPLU3103 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Features • Logic Level Gate Drive • 52A†, 30V • Low On-Resistance, rDS(ON) = 0.019Ω • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” † Calculated continuous current based on maximum allowable junction temperature. Package limited to 20A continuous, see Figure 9. Symbol Packaging JEDEC TO-251AA JEDEC TO-252AA Ordering Information PART NUMBER PACKAGE BRAND HPLU3103 TO-251AA HP3103 HPLR3103 TO-252AA HP3103 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HPLR3103T. D G S DRAIN (FLANGE) DRAIN SOURCE GATE DRAIN (FLANGE) GATE SOURCE Data Sheet July 1999 File Number 4501.2 |
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