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NDT1N70 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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NDT1N70 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type www.kexin.com.cn 1 MOSFET N-Channel MOSFET NDT1N70 ■ Features ● VDS (V) = 700V ● ID = 1.2 A (VGS = 10V) ● RDS(ON) < 13.5Ω (VGS = 10V) ● Fast switching capability 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Gate 2 Drain 3 Source 1.Gate 3.Source 2.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ± 30 Continuous Drain Current ID 1.2 Pulsed Drain Current IDM 4.8 Avalanche Current (Note.1) IAR 1.2 Avalanche Energy Single Pulsed (Note.2) EAS 50 Repetitive (Note.1) EAR 4 Peak Diode Recovery dv/dt (Note.3) dv/dt 4.5 V/ns Power Dissipation PD 3 W Thermal Resistance.Junction- to-Ambient RthJA 79 Thermal Resistance.Junction- to-Case RthJC 29 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 ℃ A mJ V ℃ /W Note.1: Repetitive Rating: Pulse width limited by maximum junction temperature Note.2: L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C Note.3: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C |
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