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NDT1N70 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # NDT1N70
Description  N-Channel MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

NDT1N70 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
N-Channel MOSFET
NDT1N70
Features
VDS (V) = 700V
ID = 1.2 A (VGS = 10V)
RDS(ON) < 13.5Ω (VGS = 10V)
Fast switching capability
2.3
0.60+ 0.1
- 0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4 .60 +0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Gate
2 Drain
3 Source
1.Gate
3.Source
2.Drain
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
700
Gate-Source Voltage
VGS
±
30
Continuous Drain Current
ID
1.2
Pulsed Drain Current
IDM
4.8
Avalanche Current
(Note.1)
IAR
1.2
Avalanche Energy
Single Pulsed (Note.2)
EAS
50
Repetitive (Note.1)
EAR
4
Peak Diode Recovery dv/dt (Note.3)
dv/dt
4.5
V/ns
Power Dissipation
PD
3
W
Thermal Resistance.Junction- to-Ambient
RthJA
79
Thermal Resistance.Junction- to-Case
RthJC
29
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
A
mJ
V
/W
Note.1: Repetitive Rating: Pulse width limited by maximum junction temperature
Note.2: L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
Note.3: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C


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