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HS9-65647RH-8 Datasheet(PDF) 1 Page - Intersil Corporation |
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HS9-65647RH-8 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 16 page 824 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HS-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram TRUTH TABLE E1 E2 G W MODE X 0 X X Low Power Standby 1 1 X X Disabled 0111 Enabled 0101 Read 0 1 X 0 Write AI COL AI ROW I/O0 I/O7 128 X 512 MEMORY ARRAY ROW DECODER INPUT DATA CIRCUIT COLUMN DECODER COLUMN I/O W G E1 E2 CONTROL CIRCUIT Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day • Latch-up Free • LET Threshold >250 MEV/mg/cm2 • Low Standby Supply Current 10mA (Max) • Low Operating Supply Current 100mA (2MHz) • Fast Access Time 50ns (Max), 35ns (Typ) • High Output Drive Capability • Gated Input Buffers (Gated by E2) • Six Transistor Memory Cell • Fully Static Design • Asynchronous Operation • CMOS Inputs • 5V Single Power Supply • Military Temperature Range -55oC to +125oC • Industry Standard JEDEC Pinout Description The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays. Low power operation is provided by a fully static design. Low standby power can be achieved without pull-up resistors, due to the gated input buffer design. August 1995 Spec Number 518729 File Number 2928.2 Ordering Information PART NUMBER TEMPERATURE RANGE PACKAGE HS1-65647RH-Q -55oC to +125oC 28 Lead SBDIP HS1-65647RH-8 -55oC to +125oC 28 Lead SBDIP HS1-65647RH/Proto -55oC to +125oC 28 Lead SBDIP HS1-65647RH/Sample +25oC 28 Lead SBDIP HS9-65647RH-Q -55oC to +125oC 28 Lead Ceramic Flatpack HS9-65647RH-8 -55oC to +125oC 28 Lead Ceramic Flatpack HS9-65647RH/Proto -55oC to +125oC 28 Lead Ceramic Flatpack HS9-65647RH/Sample +25oC 28 Lead Ceramic Flatpack HS9A-65647RH-Q -55oC to +125oC 36 Lead Ceramic Flatpack |
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