827

Specifications HS-65647RH

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTES 1, 2, 3)

CONDITIONS

GROUP A

SUBGROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Address Access Time

TAVQV

VDD = 4.5V

9, 10, 11

-

50

ns

Output Enable Access Time

TGLQV

VDD = 4.5V

9, 10, 11

-

15

ns

Chip Enable Access Time

TE1LQV

TE2HQV

VDD = 4.5V

9, 10, 11

-

50

ns

Write Recovery Time

TWHAX

TE1HAX

TE2LAX

VDD = 4.5V

9, 10, 11

-

ns

Chip Enable to End-of-Write

TE1LE1H

TE2HE2L

VDD = 4.5V

9, 10, 11

-

ns

Address Setup Time

TAVWL

TAVE1L

TAVE2H

VDD = 4.5V

9, 10, 11

-

ns

Write Enable Pulse Width

TWLWH

VDD = 4.5V

9, 10, 11

-

ns

Data Setup Time

TDVWH

VDD = 4.5V

9, 10, 11

-

ns

TDVE1H

TDVE2L

VDD = 4.5V

9, 10, 11

-

ns

Data Hold Time

TWHDX

VDD = 4.5V

9, 10, 11

-

ns

Address Hold Time

TAVE1H

TAVE2L

VDD = 4.5V

9, 10, 11

-

ns

TE2LDX

TE1HDX

VDD = 4.5V

9, 10, 11

-

ns

NOTES:

1. AC measurements tested at worst case VDD. Guaranteed over full operating range.

2. AC measurements assume transition time

≤ 5ns; input levels = 0.0V to VDD; timing reference levels = 2.0V; output load = 1 TTL equivalent

load and CL

≥ 50pF, for CL > 50pF, access times are derated 0.15ns/pF.

3. For timing waveforms, see Low Voltage Data Retention and Read/Write Cycles.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Input Capacitance

CIN

VDD = Open, f = 1MHz

1, 2, 4

-

12

pF

VDD = Open, f = 1MHz

1, 2, 4

-

12

pF

I/O Capacitance

CI/O

VDD = Open, f = 1MHz

1, 2, 4

-

12

pF

VDD = Open, f = 1MHz

1, 2, 4

-

12

pF

Write Enable to Output in

High Z

TWLQZ

VDD = 4.5V and 5.5V

1

≤ T

-

10

ns

Spec Number

518729