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5962R9676601VXC Datasheet(PDF) 5 Page - Intersil Corporation

Part # 5962R9676601VXC
Description  Radiation Hardened 256 x 8 CMOS RAM
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

5962R9676601VXC Datasheet(HTML) 5 Page - Intersil Corporation

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Specifications HS-81C55RH, HS-81C56RH
WRITE to Port Output
TWP
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
Port Input Setup Time
TPR
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC50
-
ns
Port Input Hold Time
TRP
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC15
-
ns
Strobe to Buffer Full
TSBF
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
Strobe Width
TSS
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
150
-
ns
READ to Buffer Empty
TRBE
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
Strobe to INTR Off
TSI
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
READ to INTR Off
TRDI
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
360
ns
Port Setup Time to Strobe
TPSS
Notes 1, 4, 5
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
100
-
ns
Post Hold Time After Strobe
TPHS
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
100
-
ns
Strobe to Buffer Empty
TSBE
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
WRITE to Buffer full
TWBF
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
WRITE to INTR Off
TWI
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
340
ns
TIMER-IN to TIMER OUT Low
TTL
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
TIMER-IN to TIMER-OUT High
TTH
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
-
300
ns
Data Bus Enable from READ Control
TRDE
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
120
-
ns
TIMER-IN Low Time
T1
Notes 1, 4, 6
9, 10, 11
-55oC
≤ T
A ≤ +125
oC40
-
ns
TIMER-IN High Time
T2
Notes 1, 4
9, 10, 11
-55oC
≤ T
A ≤ +125
oC
115
-
ns
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to operating frequency.
3. Output timings are measured with purely capacitive load.
4. For design purposes the limits are given as shown. For compatibility with the 80C85RH microprocessor, the AC parameters are tested
as maximums.
5. Parameter tested as part of the functional test. No read and record data available.
6. At low temperature, T1 is measured down to 10ns. If the reading is less than 10ns, the parameter will read 10ns.
7. Read and Record data available on failing data only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz, All measurements
referenced to device ground
TA = +25
oC
-
10
pF
I/O Capacitance
CI/O
VDD = Open, f = 1MHz, All measurements
referenced to device ground
TA = +25
oC
-
12
pF
Output Capacitance
COUT
VDD = Open, f = 1MHz, All measurements
referenced to device ground
TA = +25
oC
-
10
pF
Data Bus Float After
READ
TRDF
VDD = 4.75V
-55oC, +25oC,
+125oC
10
100
ns
Recovery Time Between
Controls
TRV
VDD = 4.75V
-55oC, +25oC,
+125oC
-
220
ns
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518056


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