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PS8551AL4-E3 Datasheet(PDF) 6 Page - Renesas Technology Corp |
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PS8551AL4-E3 Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 20 page PS8551AL4 Chapter Title R08DS0123EJ0100 Rev.1.00 Page 6 of 18 Jun 27, 2014 ELECTRICAL CHARACTERISTICS (AC Characteristics) (TYP.: TA = 25 °C, VIN+ = VIN− = 0 V, VDD1 = VDD2 = 5 V, MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit VOUT Bandwidth ( −3 dB) fC VIN+ = 200 mVp-p, sine wave 50 100 kHz VOUT Noise NOUT VIN+ = 0 V 15.6 mVr.m.s. VIN to VOUT Signal Delay (50 to 10%) tPD10 VIN+ = 0 to 150 mV step 2.4 3.3 μs VIN to VOUT Signal Delay (50 to 50%) tPD50 4.2 5.6 VIN to VOUT Signal Delay (50 to 90%) tPD90 6.1 9.9 VOUT Rise Time/Fall Time (10 to 90%) tr/tf VIN+ = 0 to 150 mV step 3.1 6.6 μs Common Mode Transient Immunity *1 CMTI VCM = 0.5 kV, tr = 20 ns, TA = 25 °C 10 28 kV/ μs Power Supply Noise Rejection *2 PSR f = 1 MHz 40 mVr.m.s. *1 CMTI is tested by applying a pulse that rises and falls suddenly (VCM = 0.5 kV) between GND1 on the input side and GND2 on the output side (pins 4 and 5) by using the circuit shown in Fig. 9 CMTI Test Circuit. CMTI is defined at the point where the differential output voltage (VOUT+ − VOUT−) fluctuates 200 mV (>1 μs) or more from the average output voltage. *2 This is the value of the transient voltage at the differential output when 1 Vp-p, 1 MHz, and 40 ns rise/fall time square wave is applied to both VDD1 and VDD2. |
Similar Part No. - PS8551AL4-E3 |
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Similar Description - PS8551AL4-E3 |
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