HUF75333P3 datasheet(2/9 Pages) INTERSIL

Part #	HUF75333P3

Description	66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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2 / 9 page

104

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

55

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

55

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

66

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150

1

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

55

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 50V, VGS = 0V

-

1

µA

VDS = 45V, VGS = 0V, TC = 150

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Drain to Source On Resistance

rDS(ON)

ID = 66A, VGS = 10V (Figure 9)

-

0.013

0.016

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

RθJC

(Figure 3)

-

1

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-247

-

30

oC/W

TO-220, TO-263

-

62

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 30V, ID ≅ 66A,

RL = 0.455Ω, VGS = 10V,

RGS = 6.8Ω

-

100

ns

Turn-On Delay Time

td(ON)

-12-

ns

Rise Time

tr

-55-

ns

Turn-Off Delay Time

td(OFF)

-11-

ns

Fall Time

tf

-25-

ns

Turn-Off Time

tOFF

-

55

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 30V,

ID ≅ 66A,

RL = 0.455Ω

Ig(REF) = 1.0mA

(Figure 13)

-70

85

nC

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

-

40

50

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

-

2.5

3.0

nC

Gate to Source Gate Charge

Qgs

-

6.2

-

nC

Reverse Transfer Capacitance

Qgd

-16-

nC

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