HUF75639S3R4851 datasheet(1/10 Pages) INTERSIL

Part #	HUF75639S3R4851

Description	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

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1

TM

File Number

4854

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Intersil and Design is a trademark of Intersil Corporation. | Copyright

PSPICE® is a registered trademark of MicroSim Corporation.

| SABER™ is a trademark of Analogy, Inc.

UltraFET® is a registered trademark of Intersil Corporation.

HUF75639S3R4851

56A, 115V, 0.025 Ohm, N-Channel

UltraFET Power MOSFET

This N-Channel power MOSFETs is manufactured using the

innovative UltraFET™ process. This advanced process

technology achieves the lowest possible on-resistance per

silicon area, resulting in outstanding performance. This

device is capable of withstanding high energy in the

avalanche mode and the diode exhibits very low reverse

recovery time and stored charge. It was designed for use in

applications where power efﬁciency is important, such as

switching regulators, switching converters, motor drivers,

relay drivers, low-voltage bus switches, and power

management in portable and battery-operated products.

Formerly developmental type TA75639.‘

Symbol

Features

• 56A, 115V

• Simulation Models

- Temperature Compensated PSPICETM and SABER©

Electrical Models

- Spice and Saber Thermal Impedance Models

- www.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-262AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF75639S3R4851

TO-262AA

R4851

NOTE: When ordering, use the entire part number.

D

G

S

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

HUF75639S3R4851

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

115

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

115

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

56

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200

1.35

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Data Sheet

April 2000

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