1

TM

File Number

4388.3

HUF76113T3ST

4.7A, 30V, 0.031 Ohm

, N-Channel, Logic

Level UltraFET Power MOSFET

This N-Channel power MOSFET is

manufactured using the innovative

UltraFET process. This advanced

process technology achieves the

lowest possible on-resistance per silicon area, resulting in

outstanding performance. This device is capable of

withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators, switching

converters, motor drivers, relay drivers, low-voltage bus

switches, and power management in portable and battery-

operated products.

Formerly developmental type TA76113.

Features

• Logic Level Gate Drive

• 4.7A, 30V

• Temperature Compensating SABER™ Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

SOT-223

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF76113T3ST

SOT-223

76113

NOTE: HUF76113T3ST is available only in tape and reel.

®

D

G

S

SOURCE

GATE

DRAIN

DRAIN

(FLANGE)

Data Sheet

June 2000

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET® is a registered trademark of Intersil Corporation.

PSPICE® is a registered trademark of MicroSim Corporation. SABER™ is a trademark of Analogy, Inc.

1-888-INTERSIL or 321-724-7143