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HUF76113T3ST Datasheet(PDF) 1 Page - Intersil Corporation |
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HUF76113T3ST Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 12 page 1 TM File Number 4388.3 HUF76113T3ST 4.7A, 30V, 0.031 Ohm , N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery- operated products. Formerly developmental type TA76113. Features • Logic Level Gate Drive • 4.7A, 30V • Ultra Low On-Resistance, rDS(ON) = 0.031Ω • Temperature Compensating PSPICE® Model • Temperature Compensating SABER™ Model • Thermal Impedance SPICE Model • Thermal Impedance SABER Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging SOT-223 Ordering Information PART NUMBER PACKAGE BRAND HUF76113T3ST SOT-223 76113 NOTE: HUF76113T3ST is available only in tape and reel. ® D G S SOURCE GATE DRAIN DRAIN (FLANGE) Data Sheet June 2000 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. UltraFET® is a registered trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 |
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