HUF76113T3ST datasheet(3/12 Pages) INTERSIL

Part #	HUF76113T3ST

Description	4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

3 / 12 page

3

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 15V, ID ≅ 4.7A,

RL = 3.2Ω, VGS = 10V,

RGS = 9.1Ω

(Figure 16)

-

40

ns

Turn-On Delay Time

td(ON)

-4-

ns

Rise Time

tr

-21-

ns

Turn-Off Delay Time

td(OFF)

-31-

ns

Fall Time

tf

-25-

ns

Turn-Off Time

tOFF

-

85

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 15V, ID ≅ 2.7A,

RL = 5.5Ω

Ig(REF) = 1.0mA

(Figure 14)

-

17.0

20.5

nC

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

-

9.5

11.5

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

-

0.73

0.90

nC

Gate to Source Gate Charge

Qgs

-

1.50

-

nC

Gate to Drain “Miller” Charge

Qgd

-

4.30

-

nC

CAPACITANCE SPECIFICATIONS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 13)

-

625

-

pF

Output Capacitance

COSS

-

310

-

pF

Reverse Transfer Capacitance

CRSS

-60-

pF

NOTES:

2. Rated with RθJA=110

oC/W measured using FR-4 board with 0.173 in2 copper at 1000 seconds.

Electrical Speciﬁcations

TA = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 4.7A

-

1.25

V

ISD = 2.7A

-

1.00

V

Reverse Recovery Time

trr

ISD = 2.7A, dISD/dt = 100A/µs-

-

44

ns

Reverse Recovered Charge

QRR

ISD = 2.7A, dISD/dt = 100A/µs-

-

46

nC

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

TA, AMBIENT TEMPERATURE (

oC)

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

0

1

2

3

4

5

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (

oC)

VGS = 4.5V, RθJA = 110

oC/W

VGS = 10V, RθJA = 110

oC/W

HUF76113T3ST

Similar Part No. - HUF76113T3ST

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HUF76113T3ST	614Kb / 12P	4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

More results

Similar Description - HUF76113T3ST

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HUF76113T3ST	614Kb / 12P	4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76113SK8	384Kb / 11P	6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUF76132SK8	123Kb / 11P	11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUF76121SK8	124Kb / 11P	8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76113SK8	326Kb / 12P	6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76131SK8	309Kb / 10P	10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76105SK8	123Kb / 12P	5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76131SK8	197Kb / 10P	10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76132SK8	334Kb / 12P	11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76105DK8	176Kb / 12P	5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

More results

HUF76113T3ST Datasheet(PDF) 3 Page - Intersil Corporation

HUF76113T3ST Datasheet(HTML) 3 Page - Intersil Corporation

Similar Part No. - HUF76113T3ST

Similar Description - HUF76113T3ST

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL