76132P datasheet(3/10 Pages) INTERSIL

Part #	76132P

Description	75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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3 / 10 page

6-132

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 15V, ID ≅ 75A,

RL = 0.20, VGS = 10V,

RGS = 6.8Ω

(Figures 16, 21, 22)

-

72

ns

Turn-On Delay Time

td(ON)

-11-

ns

Rise Time

tr

-37-

ns

Turn-Off Delay Time

td(OFF)

-65-

ns

Fall Time

tf

-42-

ns

Turn-Off Time

tOFF

-

160

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 15V, ID ≅ 44A,

RL = 0.341Ω

Ig(REF) = 1.0mA

(Figures 14, 19, 20)

-44

52

nC

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

-

25

30

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

-

1.8

2.2

nC

Gate to Source Gate Charge

Qgs

-

4.80

-

nC

Gate to Drain “Miller” Charge

Qgd

-

13.50

-

nC

CAPACITANCE SPECIFICATIONS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 13)

-

1650

-

pF

Output Capacitance

COSS

-

850

-

pF

Reverse Transfer Capacitance

CRSS

-

200

-

pF

Electrical Speciﬁcations

TA = 25

oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 44A

-

1.25

V

Reverse Recovery Time

trr

ISD = 44A, dISD/dt = 100A/µs-

-

71

ns

Reverse Recovered Charge

QRR

ISD = 44A, dISD/dt = 100A/µs

-

104

nC

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

TA, AMBIENT TEMPERATURE (

oC)

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

20

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (

oC)

80

40

60

VGS = 10V

VGS = 4.5V

HUF76132P3, HUF76132S3S

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