Preliminary document

Specifications in this document are tentative and subject to change.

PS9307L,PS9307L2

Chapter Title

R08DS0046EJ0001 Rev.0.01

Page 5 of 12

Jan 25, 2012

ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,

Parameter

Symbol

Conditions

MIN.

TYP.

*1

MAX.

Unit

Diode

Forward Voltage

°C

1.3

1.56

1.8

V

Reverse Current

°C

10

Input Capacitance

30

pF

Detector

High Level Output Current

− 4 V)

*2

0.2

A

− 10 V)

*3

0.4

0.7

Low Level Output Current

*2

0.2

A

*3

0.4

0.7

High Level Output Voltage

*4

V

Low Level Output Voltage

0.4

1.0

V

High Level Supply Current

1.2

2.0

mA

Low Level Supply Current

1.3

2.0

mA

Coupled

Threshold Input Current

(L

→ H)

2.1

5.0

mA

Threshold Input Voltage

(H

→ L)

0.8

V

*2. Maximum pulse width = 50

*3. Maximum pulse width = 10

SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,

Parameter

Symbol

Conditions

MIN.

TYP.

*1

MAX.

Unit

Propagation Delay Time (L

→ H)

40

75

175

ns

Propagation Delay Time (H

→ L)

f = 50 kHz,

40

90

175

ns

Pulse Width Distortion (PWD)

90

ns

Propagation Delay Time

(Difference Between Any Two

Products)

−120

120

ns

Rise Time

30

ns

Fall Time

30

ns

Common Mode Transient

Immunity at High Level Output

50

kV/

Common Mode Transient

Immunity at Low Level Output

50

kV/

*2. This load condition is equivalent to the IGBT load at 1 200 V/25 A.