HUF76145S3S datasheet(2/10 Pages) INTERSIL

Part #	HUF76145S3S

Description	75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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2 / 10 page

6-179

Absolute Maximum Ratings

TC =25

oC, Unless Otherwise Speciﬁed

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

30

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

30

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±16

V

Drain Current

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

75

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

270

2.17

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-40 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TA = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 12)

30

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 25V, VGS = 0V

-

1

µA

VDS = 25V, VGS = 0V, TC = 150

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±16V

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 11)

1

-

3

V

Drain to Source On Resistance

rDS(ON)

ID = 75A, VGS = 10V (Figure 9, 10)

-

0.0035

0.0045

Ω

ID = 75A, VGS = 5V (Figure 9)

-

0.0043

0.0058

Ω

ID = 75A, VGS = 4.5V (Figure 9)

-

0.0046

0.0065

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

RθJC

(Figure 3)

-

0.46

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-220 and TO-263

-

62

oC/W

SWITCHING SPECIFICATIONS (VGS = 4.5V)

Turn-On Time

tON

VDD = 15V, ID ≅ 75A,

RL = 0.20Ω, VGS = 4.5V,

RGS = 2.5Ω

(Figures 15, 20, 21)

-

255

ns

Turn-On Delay Time

td(ON)

-26-

ns

Rise Time

tr

-

145

-

ns

Turn-Off Delay Time

td(OFF)

-35-

ns

Fall Time

tf

-39-

ns

Turn-Off Time

tOFF

-

110

ns

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