12-7

Absolute Maximum Ratings

Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V

Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Thermal Resistance (Typical, Note 3)

PDIP Package . . . . . . . . . . . . . . . . . . .

65

N/A

SBDIP Package . . . . . . . . . . . . . . . . . .

60

18

SOIC Package . . . . . . . . . . . . . . . . . . .

75

N/A

Maximum Junction Temperature

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

destructive device latchup. For this reason, it is recommended that no inputs from external sources not operating on the same power supply be

applied to the device before its supply is established, and that in multiple supply systems, the supply to the ICM7170 be turned on first.

3.

DC Electrical Specifications

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

1.9

-

5.5

V

2.6

-

5.5

V

ICM7170

-

1.2

20.0

µA

For ICM7170A

See General Notes 5

ICM7170A

-

1.2

5.0

µA

-

20

150

µA

Read/Write Operation at 100Hz

-

0.3

1.2

mA

Read/Write Operation at 1MHz

-

1.0

2.0

mA

Input Low Voltage

-

-

0.8

V

Input High Voltage

2.4

-

-

V

Output Low Voltage

-

-

0.4

V

Output High Voltage Except

INTERRUPT

2.4

-

-

V

-10

0.5

+10

µA

Three-State Leakage Current

-10

0.5

+10

µA

Backup Battery Voltage,

2.6

-

V

Backup Battery Voltage,

1.9

-

V

ICM7170