HAT1111C_15 datasheet(4/7 Pages) RENESAS

Part #	HAT1111C

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

HAT1111C

R07DS1177EJ0700 Rev.7.00

Page 4 of 6

Mar 19, 2014

1000

800

600

400

200

−25 0

25

50

75

100 125

150

0

-0.3

-0.1

-3

-30

-100

100

30

10

3

1

0.3

0.1

-1

-10

Case Temperature

Tc (°C)

Static Drain to Source On State Resistance

vs. Temperature

Drain Current

ID (A)

Forward Transfer Admittance vs.

Drain Current

25

°C

Tc =

−25°C

75

°C

VDS = -10 V

Pulse Test

VGS = -10V

Pulse Test

-0.5,-1 A

0

-20

-40

-60

3000

1000

10000

100

300

0

-20

-4

-40

-8

-60

-12

246

8

10

-16

1000

100

1

10

-0.01 -0.03

-0.1

-0.3

-1

-3

-10

30

10

3

1

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = -2 A

VDD

VGS

Drain to Source Voltage

VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nC)

Dynamic Input Characteristics

Drain Current

ID (A)

Switching Characteristics

VDD = -50 V

-25 V

-10 V

td(on)

td(off)

tr

tf

VDD = -10 V

-25 V

-50 V

-2 A

-10

-30

-50

0

-0.4

-0.8

-1.2

-1.6

-2.0

-10

-4

VGS = 0 , 10 V

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

-2

-6

-8

-2 A

ID = -0.5,-1 A

-4.5V

-10 V

-80

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