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IRF520 Datasheet(PDF) 1 Page - Intersil Corporation |
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IRF520 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 7 page 4-172 File Number 1574.4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Features • 9.2A, 100V •rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND IRF520 TO-220AB IRF520 NOTE: When ordering, use the entire part number. G D S SOURCE DRAIN (FLANGE) DRAIN GATE Data Sheet November 1999 |
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