Electronic Components Datasheet Search |
|
RJP1CS04DWTRJP1CS04DWT Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
RJP1CS04DWTRJP1CS04DWT Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS0827EJ0300 Rev.3.00 Page 1 of 3 Oct 20, 2014 Datasheet RJP1CS04DWT / RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Tc = 25 °C) • High speed switching • Short circuit withstands time (10 μs min.) Outline 1. Gate 2. Collector (The back) 3. Emitter Die: RJP1CS04DWT-80 Wafer: RJP1CS04DWA-80 2 C 2 1 G E 3 1 3 3 Absolute Maximum Ratings ( Tc = 25°C unless otherwise noted ) Item Symbol Ratings Unit Collector to emitter voltage VCES 1250 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 100 A Tc = 100°C IC 50 A Junction temperature Tj 175 Note1 °C Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175 °C. IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175 °C. R07DS0827EJ0300 Rev.3.00 Oct 20, 2014 |
Similar Part No. - RJP1CS04DWTRJP1CS04DWT_15 |
|
Similar Description - RJP1CS04DWTRJP1CS04DWT_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |