4-11

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the In-

tegral Reverse

P-N Junction Diode

-

-

-12

A

Pulse Source to Drain Current

(Note 2)

-

-

-48

A

Source to Drain Diode Voltage (Note 2)

(Figure 13)

-

-

-1.5

V

Reverse Recovery Time

-

300

-

ns

Reverse Recovery Charge

-

1.8

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

G

D

S

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

-2.4

0

25

50

100

-12.0

150

-9.6

75

125

-4.8

-7.2

1

0.01

0.1

10

1

SINGLE PULSE

NOTES:

0.1

0.02

0.2

0.5

0.01

0.05

IRF9530, RF1S9530SM