RF1S9640SM datasheet(5/7 Pages) INTERSIL

Part #	RF1S9640SM

Description	11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.15

1.00

0.95

0.90

0.85

-80

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

80

120

160

1.05

1.10

ID = 250µA

2000

400

0

20

50

1200

VDS, DRAIN TO SOURCE VOLTAGE (V)

1600

800

CISS

COSS

CRSS

10

30

40

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

I D, DRAIN CURRENT (A)

0

-10

-20

-30

-40

2

4

6

8

10

-50

TJ = 125

oC

TJ = 25

oC

TJ = -55

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

-0.4

-1.0

-1.2

-1.6

-1.8

-0.6

-0.1

-1.0

-10

VSD, SOURCE TO DRAIN VOLTAGE (V)

-100

-0.8

-1.4

TJ = 25

oC

TJ = 150

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

Qg(TOT), Total GATE CHARGE (nC)

020

40

60

80

-10

- 5

0

VDS = -40V

VDS = -100V

VDS = -160V

ID = -11A

IRF9640, RF1S9640SM

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RF1S9640SM Datasheet(PDF) 5 Page - Intersil Corporation

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