IRFAC42 datasheet(2/7 Pages) INTERSIL

Part #	IRFAC42

Description	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFAC40

IRFAC42

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

600

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

600

V

Continuous Drain Current

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

6.2

3.9

5.4

3.4

A

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

25

22

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

125

W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0

W/oC

Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . EAS

570

mJ

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

600

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

-

4.0

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V

TJ = 125

oC

-

250

µA

On-State Drain Current (Note 4)

ID(ON)

VDS > ID(ON) x rDS(ON) MAX, VGS = 10V

IRFAC40

6.2

-

µA

IRFAC42

5.4

-

µA

Gate to Source Leakage

IGSS

VGS = ±20V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 3.4A (Figures 8, 9)

IRFAC40

-

0.97

1.2

Ω

IRFAC42

-

1.2

1.6

Ω

Forward Transconductance (Note 4)

gfs

VDS ≥ 50V, ID = 3.4A (Figure 12)

4.7

70

-

S

Turn-On Delay Time

td(ON)

VDD = 0.5V x Rated BVDSS, ID ≈ 6.2A, RG =

9.1

Ω, RL = 47Ω, VGS = 10V (Figures 17, 18)

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-13

20

ns

Rise Time

tr

-18

27

ns

Turn-Off Delay Time

td(OFF)

-55

83

ns

Fall Time

tf

-20

30

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 6.2A, VDSS = 0.8 x Rated

BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

-40

60

nC

Gate to Source Charge

Qgs

-

5.5

-

nC

Gate to Drain “Miller” Charge

Qgd

-20

-

nC

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