IRFD320 datasheet(4/6 Pages) INTERSIL

Part #	IRFD320

Description	0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Typical Performance Curves

Unless Otherwise Speciﬁed

(Continued)

0

1

0

4

812

20

2

3

VDS, DRAIN TO SOURCE VOLTAGE (V)

4

16

5

VGS = 10V

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

5

4

3

2

1

0

012

3

4

6

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 125

oC

TJ = 25

oC

TJ = -55

oC

5

6

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0

3

2

46

ID, DRAIN CURRENT (A)

8

4

0

1

2

5

2

µs PULSE TEST

VGS = 20V

VGS = 10V

10

12

6

DUTY CYCLE = 0.5% MAX

2.2

1.4

1.0

0.6

0.2

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

120

1.8

80

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 0.25A

1.25

1.05

0.95

0.85

0.75

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

120

1.15

80

160

ID = 250µA

1000

200

0

20

50

600

VDS, DRAIN TO SOURCE VOLTAGE (V)

800

400

CISS

COSS

CRSS

10

30

40

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

IRFD320

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IRFD320 Datasheet(PDF) 4 Page - Intersil Corporation

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