IRFF120 datasheet(4/7 Pages) INTERSIL

Part #	IRFF120

Description	6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

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4

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

Unless Otherwise Speciﬁed

(Continued)

1.0

10.0

100.0

200.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

50.0

10.0

1.0

0.1

100

µs

1ms

10

µs

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

TJ = MAX RATED

10ms

100ms

DC

010

20

30

40

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

20

16

12

8

4

0

80

µs PULSE TEST

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

VGS = 8V

VGS = 9V

VGS = 10V

0

2

0

1

23

5

4

6

VDS, DRAIN TO SOURCE VOLTAGE (V)

8

4

10

80

µs PULSE TEST

VGS = 9V

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

02

6

0

4

12

VGS, GATE TO SOURCE VOLTAGE (V)

20

8

16

4

810

-55oC

VDS > ID(ON) x rDS(ON)MAX

80

µs PULSE TEST

25oC

125oC

0

0.4

0.6

0.8

10

20

30

40

ID, DRAIN CURRENT (A)

0

0.2

VGS = 10V

VGS = 20V

2

µs PULSE TEST

2.50

1.50

1.00

0.50

0

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

120

2.00

80

VGS = 10V

ID = 3A

IRFF120

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