SI2309DS-3 datasheet(2/5 Pages) KEXIN

Part #	SI2309DS-3

Description	P-Channel Enhancement MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

P-Channel Enhancement MOSFET

SI2309DS (KI2309DS)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-60

V

VDS=-48V, VGS=0V

-1

VDS=-48V, VGS=0V, TJ=125℃

-50

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-1

-3

V

VGS=-10V, ID=-1.25A

275

340

VGS=-4.5V, ID=-1A

406

550

On state drain current *1

ID(ON)

VGS=-4.5V, VDS=-10V

-6

A

Forward Transconductance *1

gFS

VDS=-4.5V, ID=-1A

1.9

S

Total Gate Charge

Qg

5.4

12

Gate Source Charge

Qgs

1.15

Gate Drain Charge

Qgd

0.92

Turn-On DelayTime

td(on)

10.5

20

Turn-On Rise Time

tr

11.5

20

Turn-Off DelayTime

td(off)

15.5

30

Turn-Off Fall Time

tf

7.5

15

Body Diode Reverse Recovery Time

trr

IF=-1.25A, dI/dt=100A/μs

30

55

Maximum Body-Diode Continuous Current

IS

-1.25

A

Diode Forward Voltage

VSD

IS=-1.25A,VGS=0V

-0.82 -1.2

V

nC

VGS=-4.5V, VDS=-30V, RL=30Ω,RGEN=6Ω

ID=-1A

ns

Zero Gate Voltage Drain Current

IDSS

μ

A

mΩ

RDS(On)

Static Drain-Source On-Resistance *1

VGS=-10V, VDS=-30V, ID=-1.25A

*1 Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%.

■

Marking

A9*

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SI2309DS-3 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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