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IRFU214 Datasheet(PDF) 3 Page - Intersil Corporation |
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IRFU214 Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 6 page 4-385 Internal Drain Inductance LD Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 4.5 - nH Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad - 7.5 - nH Thermal Resistance Junction to Case RθJC - - 5.0 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 110 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the In- tegral Reverse P-N Junction Diode - - 2.2 A Pulse Source to Drain Current (Note 2) ISDM - - 8.8 A Source to Drain Diode Voltage (Note 4) VSD TJ = 25 oC, I SD = 2.2A, VGS = 0V(Figure 10) - - 2.0 V Reverse Recovery Time trr TJ = 25 oC, I SD = 2.7A, dISD/dt = 100A/µs 97 - 390 ns Reverse Recovery Charge QRR TJ = 25 oC, I SD = 2.7A, dISD/dt = 100A/µs 0.32 - 1.3 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3) 4. VDD = 50V, starting TJ = 25 oC, L = 21mH, R G = 25Ω, peak IAS = 2.2A. Typical Performance Curves Unless Otherwise Specified FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS LS LD G D S G D S 0 50 100 150 0 TC, CASE TEMPERATURE ( oC) 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 TC, CASE TEMPERATURE ( oC) 150 0.8 1.2 1.6 2.0 2.4 0.4 IRFR214, IRFU214 |
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